| PART |
Description |
Maker |
| WV3HG64M72EER403D6IMG WV3HG64M72EER403D6ISG WV3HG6 |
512MB - 64Mx72 DDR2 SDRAM REGISTERED DIMM, w/PLL
|
White Electronic Designs Corporation
|
| WV3HG64M72EER-D7 WV3HG64M72EER806D7SG WV3HG64M72EE |
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL, Mini-DIMM
|
WEDC[White Electronic Designs Corporation]
|
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| WED3DG7266V75D1I-MG WED3DG7266V7D1XX WED3DG7266V10 |
512MB - 64Mx72 SDRAM, UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| WED3DG7266V-D1 |
512MB - 64Mx72 SDRAM, UNBUFFERED, w/PLL
|
http://
|
| W3DG7266V7D2 W3DG7266V10D2 W3DG7266V75D2 W3DG7266V |
512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7266S262D3 W3EG7266S-D3 W3EG7266S265D3 W3EG726 |
512MB - 64Mx72 DDR SDRAM REGISTERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD264726B8 HYMD264726BL8-H HYMD264726BL8-K HYMD2 |
64Mx72|2.5V|M/K/H/L|x18|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| H5PS5162FFR-Y5 H5PS5162FFR-S6 H5PS5162FFR-C H5PS51 |
512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
